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HXY MOSFET HC2M0045170D
| Manufacturer | |
| Mfr. Part # | HC2M0045170D |
| EBEE Part # | E819723849 |
| Package | TO-247-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-3L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>2 In Stock for Fast Shipping
2 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $24.9716 | $ 24.9716 |
| 30+ | $24.1200 | $ 723.6000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC2M0045170D | |
| RoHS | ||
| RDS(on) | 70mΩ | |
| Operating Temperature - | -40℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 6.7pF | |
| Pd - Power Dissipation | 520W | |
| Drain to Source Voltage | 1.7kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 72A | |
| Ciss-Input Capacitance | 3.672nF | |
| Output Capacitance(Coss) | 171pF | |
| Gate Charge(Qg) | 188nC |
Shopping Guide
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2 Stock for Shipping Fast
2 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $24.9716 | $ 24.9716 |
| 30+ | $24.1200 | $ 723.6000 |
Best price for more quantity?
$
