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HXY MOSFET HC1M40120J
| Manufacturer | |
| Mfr. Part # | HC1M40120J |
| EBEE Part # | E841428801 |
| Package | TO-263-7L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-263-7L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>59 In Stock for Fast Shipping
59 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.6219 | $ 10.6219 |
| 10+ | $10.1196 | $ 101.1960 |
| 50+ | $9.2510 | $ 462.5500 |
| 100+ | $8.4909 | $ 849.0900 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC1M40120J | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 40mΩ@18V | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF | |
| Pd - Power Dissipation | 326W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 2.766nF | |
| Output Capacitance(Coss) | 125pF | |
| Gate Charge(Qg) | 112nC |
Shopping Guide
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59 Stock for Shipping Fast
59 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.6219 | $ 10.6219 |
| 10+ | $10.1196 | $ 101.1960 |
| 50+ | $9.2510 | $ 462.5500 |
| 100+ | $8.4909 | $ 849.0900 |
Best price for more quantity?
$
