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HXY MOSFET HC1M320120D
| Manufacturer | |
| Mfr. Part # | HC1M320120D |
| EBEE Part # | E841428808 |
| Package | TO-247-4L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>13 In Stock for Fast Shipping
13 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.4917 | $ 4.4917 |
| 10+ | $3.8544 | $ 38.5440 |
| 30+ | $3.4750 | $ 104.2500 |
| 90+ | $3.0918 | $ 278.2620 |
| 510+ | $2.9152 | $ 1486.7520 |
| 990+ | $2.8350 | $ 2806.6500 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | HXY MOSFET HC1M320120D | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 450mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Ciss-Input Capacitance | 324pF | |
| Output Capacitance(Coss) | 24pF | |
| Gate Charge(Qg) | 23.5nC |
Shopping Guide
Expand
13 Stock for Shipping Fast
13 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.4917 | $ 4.4917 |
| 10+ | $3.8544 | $ 38.5440 |
| 30+ | $3.4750 | $ 104.2500 |
| 90+ | $3.0918 | $ 278.2620 |
| 510+ | $2.9152 | $ 1486.7520 |
| 990+ | $2.8350 | $ 2806.6500 |
Best price for more quantity?
$
