| Manufacturer | |
| Mfr. Part # | G3R75MT12K |
| EBEE Part # | E85748099 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $25.9619 | $ 25.9619 |
| 210+ | $10.3607 | $ 2175.7470 |
| 510+ | $10.0139 | $ 5107.0890 |
| 990+ | $9.8423 | $ 9743.8770 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G3R75MT12K | |
| RoHS | ||
| Power Dissipation | 207W | |
| Continuous Drain Current | 41A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $25.9619 | $ 25.9619 |
| 210+ | $10.3607 | $ 2175.7470 |
| 510+ | $10.0139 | $ 5107.0890 |
| 990+ | $9.8423 | $ 9743.8770 |
