| Manufacturer | |
| Mfr. Part # | G3R40MT12D |
| EBEE Part # | E83281044 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $42.5408 | $ 42.5408 |
| 200+ | $16.4625 | $ 3292.5000 |
| 500+ | $15.8845 | $ 7942.2500 |
| 1000+ | $15.5983 | $ 15598.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G3R40MT12D | |
| RoHS | ||
| Power Dissipation | 333W | |
| Continuous Drain Current | 71A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $42.5408 | $ 42.5408 |
| 200+ | $16.4625 | $ 3292.5000 |
| 500+ | $15.8845 | $ 7942.2500 |
| 1000+ | $15.5983 | $ 15598.3000 |
