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GeneSiC Semiconductor G3R350MT12J
| Manufacturer | |
| Mfr. Part # | G3R350MT12J |
| EBEE Part # | E86203464 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
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Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.7708 | $ 16.7708 |
| 200+ | $6.6916 | $ 1338.3200 |
| 500+ | $6.4685 | $ 3234.2500 |
| 1000+ | $6.3588 | $ 6358.8000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G3R350MT12J | |
| RoHS | ||
| Power Dissipation | 75W | |
| Continuous Drain Current | 11A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.7708 | $ 16.7708 |
| 200+ | $6.6916 | $ 1338.3200 |
| 500+ | $6.4685 | $ 3234.2500 |
| 1000+ | $6.3588 | $ 6358.8000 |
