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GeneSiC Semiconductor G3R20MT12N
| Manufacturer | |
| Mfr. Part # | G3R20MT12N |
| EBEE Part # | E83280066 |
| Package | SOT-227 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | SOT-227 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
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Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $69.9440 | $ 69.9440 |
| 200+ | $27.0688 | $ 5413.7600 |
| 500+ | $26.1159 | $ 13057.9500 |
| 1000+ | $25.6475 | $ 25647.5000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G3R20MT12N | |
| RoHS | ||
| Power Dissipation | 365W | |
| Continuous Drain Current | 105A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $69.9440 | $ 69.9440 |
| 200+ | $27.0688 | $ 5413.7600 |
| 500+ | $26.1159 | $ 13057.9500 |
| 1000+ | $25.6475 | $ 25647.5000 |
