| Manufacturer | |
| Mfr. Part # | G3R20MT12K |
| EBEE Part # | E83290744 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $92.1704 | $ 92.1704 |
| 200+ | $35.6689 | $ 7133.7800 |
| 500+ | $34.4163 | $ 17208.1500 |
| 1000+ | $33.7963 | $ 33796.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G3R20MT12K | |
| RoHS | ||
| Power Dissipation | 542W | |
| Continuous Drain Current | 128A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $92.1704 | $ 92.1704 |
| 200+ | $35.6689 | $ 7133.7800 |
| 500+ | $34.4163 | $ 17208.1500 |
| 1000+ | $33.7963 | $ 33796.3000 |
