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GeneSiC Semiconductor G3R12MT12K
| Manufacturer | |
| Mfr. Part # | G3R12MT12K |
| EBEE Part # | E86048360 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
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Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $163.6173 | $ 163.6173 |
| 210+ | $65.2846 | $ 13709.7660 |
| 510+ | $63.1045 | $ 32183.2950 |
| 990+ | $62.0259 | $ 61405.6410 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G3R12MT12K | |
| RoHS | ||
| Power Dissipation | 567W | |
| Continuous Drain Current | 157A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $163.6173 | $ 163.6173 |
| 210+ | $65.2846 | $ 13709.7660 |
| 510+ | $63.1045 | $ 32183.2950 |
| 990+ | $62.0259 | $ 61405.6410 |
