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GeneSiC Semiconductor G2R1000MT33J
| Manufacturer | |
| Mfr. Part # | G2R1000MT33J |
| EBEE Part # | E83291150 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $44.5110 | $ 44.5110 |
| 200+ | $17.2252 | $ 3445.0400 |
| 500+ | $16.6208 | $ 8310.4000 |
| 1000+ | $16.3215 | $ 16321.5000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G2R1000MT33J | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Power Dissipation | 74W | |
| Total Gate Charge | 18nC | |
| Continuous Drain Current | 5A | |
| Reverse Transfer Capacitance | 2.4pF | |
| Input Capacitance | 238pF | |
| Output Capacitance | 10pF | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | 1000mΩ | |
| Encapsulated Type | Single Tube | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 3300V | |
| Drain Source Threshold Voltage | 3.5V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $44.5110 | $ 44.5110 |
| 200+ | $17.2252 | $ 3445.0400 |
| 500+ | $16.6208 | $ 8310.4000 |
| 1000+ | $16.3215 | $ 16321.5000 |
