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GeneSiC Semiconductor G2R1000MT17J
| Manufacturer | |
| Mfr. Part # | G2R1000MT17J |
| EBEE Part # | E83291152 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
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Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.4649 | $ 14.4649 |
| 200+ | $5.5983 | $ 1119.6600 |
| 500+ | $5.4026 | $ 2701.3000 |
| 1000+ | $5.3039 | $ 5303.9000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | GeneSiC Semiconductor G2R1000MT17J | |
| RoHS | ||
| Operating Temperature | - | |
| Power Dissipation | 54W | |
| Total Gate Charge | - | |
| Continuous Drain Current | 5A | |
| Reverse Transfer Capacitance | - | |
| Input Capacitance | - | |
| Output Capacitance | - | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | - | |
| Encapsulated Type | - | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 1700V | |
| Drain Source Threshold Voltage | - |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $14.4649 | $ 14.4649 |
| 200+ | $5.5983 | $ 1119.6600 |
| 500+ | $5.4026 | $ 2701.3000 |
| 1000+ | $5.3039 | $ 5303.9000 |
