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Bruckewell CMS120N080WK
| Manufacturer | |
| Mfr. Part # | CMS120N080WK |
| EBEE Part # | E829781282 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>30 In Stock for Fast Shipping
30 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.7543 | $ 17.7543 |
| 10+ | $17.0547 | $ 170.5470 |
| 30+ | $15.8459 | $ 475.3770 |
| 90+ | $14.7892 | $ 1331.0280 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Bruckewell CMS120N080WK | |
| RoHS | ||
| Power Dissipation | 188W | |
| Total Gate Charge | 61nC | |
| Continuous Drain Current | 35A | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | 77mΩ | |
| Encapsulated Type | - | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 1200V | |
| Drain Source Threshold Voltage | 4V |
Shopping Guide
Expand
30 Stock for Shipping Fast
30 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $17.7543 | $ 17.7543 |
| 10+ | $17.0547 | $ 170.5470 |
| 30+ | $15.8459 | $ 475.3770 |
| 90+ | $14.7892 | $ 1331.0280 |
Best price for more quantity?
$
