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Bruckewell CMS120N080B
| Manufacturer | |
| Mfr. Part # | CMS120N080B |
| EBEE Part # | E829781281 |
| Package | TO-263-7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>30 In Stock for Fast Shipping
30 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $21.6691 | $ 21.6691 |
| 10+ | $20.8173 | $ 208.1730 |
| 30+ | $19.3401 | $ 580.2030 |
| 100+ | $18.0516 | $ 1805.1600 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | Bruckewell CMS120N080B | |
| RoHS | ||
| Power Dissipation | 188W | |
| Total Gate Charge | 61nC | |
| Continuous Drain Current | 35A | |
| Configuration | - | |
| Channel Type | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | - | |
| Drain-Source On-State Resistance(18V) | - | |
| Drain-Source On-State Resistance(20V) | 77mΩ | |
| Encapsulated Type | - | |
| Drain-Source On-State Resistance(10V) | - | |
| Drain Source Voltage | 1200V | |
| Drain Source Threshold Voltage | 4V |
Shopping Guide
Expand
30 Stock for Shipping Fast
30 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $21.6691 | $ 21.6691 |
| 10+ | $20.8173 | $ 208.1730 |
| 30+ | $19.3401 | $ 580.2030 |
| 100+ | $18.0516 | $ 1805.1600 |
Best price for more quantity?
$
