Recommonended For You
Images are for reference only
Add to Favourites
ANHI ADP120N080G2
| Manufacturer | |
| Mfr. Part # | ADP120N080G2 |
| EBEE Part # | E822470090 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-220 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
This materials supports customized cables!
Learn more >>43 In Stock for Fast Shipping
43 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5581 | $ 3.5581 |
| 10+ | $3.0691 | $ 30.6910 |
| 50+ | $2.7785 | $ 138.9250 |
| 100+ | $2.4832 | $ 248.3200 |
| 500+ | $2.3482 | $ 1174.1000 |
| 1000+ | $2.2863 | $ 2286.3000 |
Best price for more quantity?
$
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | ANHI ADP120N080G2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 100mΩ | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF | |
| Pd - Power Dissipation | 188W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 1.377nF | |
| Output Capacitance(Coss) | 62pF | |
| Gate Charge(Qg) | 58nC |
Shopping Guide
Expand
43 Stock for Shipping Fast
43 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5581 | $ 3.5581 |
| 10+ | $3.0691 | $ 30.6910 |
| 50+ | $2.7785 | $ 138.9250 |
| 100+ | $2.4832 | $ 248.3200 |
| 500+ | $2.3482 | $ 1174.1000 |
| 1000+ | $2.2863 | $ 2286.3000 |
Best price for more quantity?
$
