| Manufacturer | |
| Mfr. Part # | AS1M025120T |
| EBEE Part # | E85569900 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.6782 | $ 16.6782 |
| 210+ | $6.6553 | $ 1397.6130 |
| 510+ | $6.4325 | $ 3280.5750 |
| 990+ | $6.3230 | $ 6259.7700 |
| Type | Description | Select All |
|---|---|---|
| Category | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datasheet | AnBon AS1M025120T | |
| RoHS | ||
| Power Dissipation | 370W | |
| Continuous Drain Current | 65A | |
| Channel Type | 1 N-Channel | |
| Drain Source Voltage | 1200V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $16.6782 | $ 16.6782 |
| 210+ | $6.6553 | $ 1397.6130 |
| 510+ | $6.4325 | $ 3280.5750 |
| 990+ | $6.3230 | $ 6259.7700 |
