| Manufacturer | |
| Mfr. Part # | CID18N65D |
| EBEE Part # | E822446733 |
| Package | DFN-8(8x8) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2596 | $ 1.2596 |
| 10+ | $1.0354 | $ 10.3540 |
| 30+ | $0.9124 | $ 27.3720 |
| 100+ | $0.7878 | $ 78.7800 |
| 500+ | $0.7255 | $ 362.7500 |
| 1000+ | $0.6975 | $ 697.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | Tokmas CID18N65D | |
| RoHS | ||
| Type | 1 N-channel | |
| RDS(on) | 100mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.5pF | |
| Pd - Power Dissipation | 113W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 125pF | |
| Gate Charge(Qg) | 3.3nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2596 | $ 1.2596 |
| 10+ | $1.0354 | $ 10.3540 |
| 30+ | $0.9124 | $ 27.3720 |
| 100+ | $0.7878 | $ 78.7800 |
| 500+ | $0.7255 | $ 362.7500 |
| 1000+ | $0.6975 | $ 697.5000 |
