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HXY MOSFET HIGLD60R190D1
| Manufacturer | |
| Mfr. Part # | HIGLD60R190D1 |
| EBEE Part # | E841426365 |
| Package | DFN-8(8x8) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS |
This materials supports customized cables!
Learn more >>188 In Stock for Fast Shipping
188 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2879 | $ 4.2879 |
| 10+ | $3.7189 | $ 37.1890 |
| 30+ | $3.1313 | $ 93.9390 |
| 100+ | $2.8401 | $ 284.0100 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | HXY MOSFET HIGLD60R190D1 | |
| RoHS | ||
| Type | 1 N-channel | |
| RDS(on) | 160mΩ@6V | |
| Operating Temperature - | - | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| Pd - Power Dissipation | 75W | |
| Drain to Source Voltage | - | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | - | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | - |
Shopping Guide
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188 Stock for Shipping Fast
188 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2879 | $ 4.2879 |
| 10+ | $3.7189 | $ 37.1890 |
| 30+ | $3.1313 | $ 93.9390 |
| 100+ | $2.8401 | $ 284.0100 |
Best price for more quantity?
$
