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NITRIDE YHJ-65H225AMC
| Manufacturer | |
| Mfr. Part # | YHJ-65H225AMC |
| EBEE Part # | E822458937 |
| Package | DFN-8(8x8) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS |
This materials supports customized cables!
Learn more >>2273 In Stock for Fast Shipping
2273 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6479 | $ 0.6479 |
| 10+ | $0.5848 | $ 5.8480 |
| 30+ | $0.5498 | $ 16.4940 |
| 100+ | $0.5105 | $ 51.0500 |
| 500+ | $0.4937 | $ 246.8500 |
| 1000+ | $0.4853 | $ 485.3000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | NITRIDE YHJ-65H225AMC | |
| RoHS | ||
| RDS(on) | 215mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| Pd - Power Dissipation | 63W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 90pF | |
| Output Capacitance(Coss) | 50pF | |
| Gate Charge(Qg) | 1.6nC |
Shopping Guide
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2273 Stock for Shipping Fast
2273 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6479 | $ 0.6479 |
| 10+ | $0.5848 | $ 5.8480 |
| 30+ | $0.5498 | $ 16.4940 |
| 100+ | $0.5105 | $ 51.0500 |
| 500+ | $0.4937 | $ 246.8500 |
| 1000+ | $0.4853 | $ 485.3000 |
Best price for more quantity?
$
