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GOSEMICON GBG65200NMAR


Manufacturer
Mfr. Part #
GBG65200NMAR
EBEE Part #
E828324645
Package
PDFN-9L(8x8)
Customer #
Datasheet
EDA Models
ECCN
-
Description
PDFN-9L(8x8) GaN Transistors(GaN HEMT) ROHS
This materials supports customized cables!
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427 In Stock for Fast Shipping
427 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.3418$ 1.3418
10+$1.1097$ 11.0970
30+$0.9824$ 29.4720
100+$0.8387$ 83.8700
500+$0.7743$ 387.1500
1000+$0.7458$ 745.8000
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TypeDescription
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CategoryGallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT)
DatasheetGOSEMICON GBG65200NMAR
RoHS
RDS(on)140mΩ
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)0.8pF
Pd - Power Dissipation83W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))1.4V
Current - Continuous Drain(Id)11A
Ciss-Input Capacitance68pF
Output Capacitance(Coss)30pF
Gate Charge(Qg)1.9nC

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