5% off
| Manufacturer | |
| Mfr. Part # | GBG65200NMAR |
| EBEE Part # | E828324645 |
| Package | PDFN-9L(8x8) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | PDFN-9L(8x8) GaN Transistors(GaN HEMT) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3418 | $ 1.3418 |
| 10+ | $1.1097 | $ 11.0970 |
| 30+ | $0.9824 | $ 29.4720 |
| 100+ | $0.8387 | $ 83.8700 |
| 500+ | $0.7743 | $ 387.1500 |
| 1000+ | $0.7458 | $ 745.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | GOSEMICON GBG65200NMAR | |
| RoHS | ||
| RDS(on) | 140mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.8pF | |
| Pd - Power Dissipation | 83W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 68pF | |
| Output Capacitance(Coss) | 30pF | |
| Gate Charge(Qg) | 1.9nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3418 | $ 1.3418 |
| 10+ | $1.1097 | $ 11.0970 |
| 30+ | $0.9824 | $ 29.4720 |
| 100+ | $0.8387 | $ 83.8700 |
| 500+ | $0.7743 | $ 387.1500 |
| 1000+ | $0.7458 | $ 745.8000 |
