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HXY MOSFET HCG65200DAA


Manufacturer
Mfr. Part #
HCG65200DAA
EBEE Part #
E822396442
Package
DFN-8(8x8)
Customer #
Datasheet
EDA Models
ECCN
-
Description
DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS
This materials supports customized cables!
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15 In Stock for Fast Shipping
15 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.6859$ 2.6859
10+$2.6226$ 26.2260
30+$2.5794$ 77.3820
100+$2.5378$ 253.7800
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TypeDescription
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CategoryGallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT)
DatasheetHXY MOSFET HCG65200DAA
RoHS
RDS(on)160mΩ
Pd - Power Dissipation75W
Drain to Source Voltage650V

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