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HXY MOSFET HCG65200DBA
| Manufacturer | |
| Mfr. Part # | HCG65200DBA |
| EBEE Part # | E822396443 |
| Package | DFN-8L(5x6) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | DFN-8L(5x6) GaN Transistors(GaN HEMT) ROHS |
This materials supports customized cables!
Learn more >>73 In Stock for Fast Shipping
73 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4184 | $ 3.4184 |
| 10+ | $2.9220 | $ 29.2200 |
| 30+ | $2.6277 | $ 78.8310 |
| 100+ | $2.3289 | $ 232.8900 |
| 500+ | $2.1912 | $ 1095.6000 |
| 1000+ | $2.1301 | $ 2130.1000 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | HXY MOSFET HCG65200DBA | |
| RoHS | ||
| RDS(on) | 160mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF | |
| Pd - Power Dissipation | 75W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 83pF | |
| Output Capacitance(Coss) | 27pF | |
| Gate Charge(Qg) | 2.3nC |
Shopping Guide
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73 Stock for Shipping Fast
73 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4184 | $ 3.4184 |
| 10+ | $2.9220 | $ 29.2200 |
| 30+ | $2.6277 | $ 78.8310 |
| 100+ | $2.3289 | $ 232.8900 |
| 500+ | $2.1912 | $ 1095.6000 |
| 1000+ | $2.1301 | $ 2130.1000 |
Best price for more quantity?
$
