| Manufacturer | |
| Mfr. Part # | CID9N65E3 |
| EBEE Part # | E822446729 |
| Package | TO-252-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252-3L GaN Transistors(GaN HEMT) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8098 | $ 0.8098 |
| 10+ | $0.6589 | $ 6.5890 |
| 30+ | $0.5827 | $ 17.4810 |
| 100+ | $0.5081 | $ 50.8100 |
| 500+ | $0.4637 | $ 231.8500 |
| 1000+ | $0.4398 | $ 439.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | Tokmas CID9N65E3 | |
| RoHS | ||
| RDS(on) | 334mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.3pF | |
| Pd - Power Dissipation | 39W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Ciss-Input Capacitance | 42pF | |
| Output Capacitance(Coss) | 13pF | |
| Gate Charge(Qg) | 1.2nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8098 | $ 0.8098 |
| 10+ | $0.6589 | $ 6.5890 |
| 30+ | $0.5827 | $ 17.4810 |
| 100+ | $0.5081 | $ 50.8100 |
| 500+ | $0.4637 | $ 231.8500 |
| 1000+ | $0.4398 | $ 439.8000 |
