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Tokmas CID9N65E3


Manufacturer
Mfr. Part #
CID9N65E3
EBEE Part #
E822446729
Package
TO-252-3L
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-252-3L GaN Transistors(GaN HEMT) ROHS
This materials supports customized cables!
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555 In Stock for Fast Shipping
555 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.8098$ 0.8098
10+$0.6589$ 6.5890
30+$0.5827$ 17.4810
100+$0.5081$ 50.8100
500+$0.4637$ 231.8500
1000+$0.4398$ 439.8000
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TypeDescription
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CategoryGallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT)
DatasheetTokmas CID9N65E3
RoHS
RDS(on)334mΩ
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)0.3pF
Pd - Power Dissipation39W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))1.5V
Current - Continuous Drain(Id)4.8A
Ciss-Input Capacitance42pF
Output Capacitance(Coss)13pF
Gate Charge(Qg)1.2nC

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