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Tokmas CID10N65F


Manufacturer
Mfr. Part #
CID10N65F
EBEE Part #
E822446732
Package
TO-220F-3L
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-220F-3L GaN Transistors(GaN HEMT) ROHS
This materials supports customized cables!
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430 In Stock for Fast Shipping
430 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.0766$ 1.0766
10+$0.8814$ 8.8140
50+$0.7746$ 38.7300
100+$0.6537$ 65.3700
500+$0.5995$ 299.7500
1000+$0.5747$ 574.7000
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TypeDescription
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CategoryGallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT)
DatasheetTokmas CID10N65F
RoHS
Type1 N-channel
RDS(on)160mΩ@6V
Operating Temperature --50℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)0.4pF
Pd - Power Dissipation75W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))1.6V
Current - Continuous Drain(Id)10A
Ciss-Input Capacitance83pF
Output Capacitance(Coss)27pF
Gate Charge(Qg)2.3nC

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