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Tokmas CID10N65E3


Manufacturer
Mfr. Part #
CID10N65E3
EBEE Part #
E841369699
Package
TO-252
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-252 GaN Transistors(GaN HEMT) ROHS
This materials supports customized cables!
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667 In Stock for Fast Shipping
667 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.5363$ 0.5363
10+$0.4714$ 4.7140
30+$0.4382$ 13.1460
100+$0.4066$ 40.6600
500+$0.4018$ 200.9000
1000+$0.3907$ 390.7000
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TypeDescription
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CategoryGallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT)
DatasheetTokmas CID10N65E3
RoHS
RDS(on)160mΩ
Reverse Transfer Capacitance (Crss@Vds)0.4pF
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))1.6V
Ciss-Input Capacitance83pF
Output Capacitance(Coss)27pF
Gate Charge(Qg)2.3nC

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