| Manufacturer | |
| Mfr. Part # | CID10N65E3 |
| EBEE Part # | E841369699 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-252 GaN Transistors(GaN HEMT) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5363 | $ 0.5363 |
| 10+ | $0.4714 | $ 4.7140 |
| 30+ | $0.4382 | $ 13.1460 |
| 100+ | $0.4066 | $ 40.6600 |
| 500+ | $0.4018 | $ 200.9000 |
| 1000+ | $0.3907 | $ 390.7000 |
| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | Tokmas CID10N65E3 | |
| RoHS | ||
| RDS(on) | 160mΩ | |
| Reverse Transfer Capacitance (Crss@Vds) | 0.4pF | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Ciss-Input Capacitance | 83pF | |
| Output Capacitance(Coss) | 27pF | |
| Gate Charge(Qg) | 2.3nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5363 | $ 0.5363 |
| 10+ | $0.4714 | $ 4.7140 |
| 30+ | $0.4382 | $ 13.1460 |
| 100+ | $0.4066 | $ 40.6600 |
| 500+ | $0.4018 | $ 200.9000 |
| 1000+ | $0.3907 | $ 390.7000 |
