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PN Junction Semiconductor P1H06300D8
| Manufacturer | |
| Mfr. Part # | P1H06300D8 |
| EBEE Part # | E85840753 |
| Package | DFN8080-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| Description | DFN8080-8 GaN Transistors(GaN HEMT) ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.3688 | $ 11.3688 |
| 200+ | $4.5361 | $ 907.2200 |
| 500+ | $4.3844 | $ 2192.2000 |
| 1000+ | $4.3095 | $ 4309.5000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | PN Junction Semiconductor P1H06300D8 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Power Dissipation | 55.5W | |
| Drain Source Breakdown Voltage | 650V | |
| Transistor Type | 1 N-Channel | |
| Continuous Drain Current | 10A |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.3688 | $ 11.3688 |
| 200+ | $4.5361 | $ 907.2200 |
| 500+ | $4.3844 | $ 2192.2000 |
| 1000+ | $4.3095 | $ 4309.5000 |
