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NITRIDE YHJ-65P150TK


Manufacturer
Mfr. Part #
YHJ-65P150TK
EBEE Part #
E841371701
Package
TO-220
Customer #
Datasheet
EDA Models
ECCN
-
Description
TO-220 GaN Transistors(GaN HEMT) ROHS
This materials supports customized cables!
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148 In Stock for Fast Shipping
148 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.2439$ 1.2439
10+$1.0223$ 10.2230
50+$0.9495$ 47.4750
100+$0.8119$ 81.1900
500+$0.7501$ 375.0500
1000+$0.7232$ 723.2000
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TypeDescription
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CategoryGallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT)
DatasheetNITRIDE YHJ-65P150TK
RoHS
RDS(on)150mΩ@6V
Reverse Transfer Capacitance (Crss@Vds)1pF
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Ciss-Input Capacitance505pF
Output Capacitance(Coss)29pF
Gate Charge(Qg)12nC

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