| Manufacturer | |
| Mfr. Part # | YHJ-65P150TK |
| EBEE Part # | E841371701 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | TO-220 GaN Transistors(GaN HEMT) ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2439 | $ 1.2439 |
| 10+ | $1.0223 | $ 10.2230 |
| 50+ | $0.9495 | $ 47.4750 |
| 100+ | $0.8119 | $ 81.1900 |
| 500+ | $0.7501 | $ 375.0500 |
| 1000+ | $0.7232 | $ 723.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datasheet | NITRIDE YHJ-65P150TK | |
| RoHS | ||
| RDS(on) | 150mΩ@6V | |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 12A | |
| Ciss-Input Capacitance | 505pF | |
| Output Capacitance(Coss) | 29pF | |
| Gate Charge(Qg) | 12nC |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.2439 | $ 1.2439 |
| 10+ | $1.0223 | $ 10.2230 |
| 50+ | $0.9495 | $ 47.4750 |
| 100+ | $0.8119 | $ 81.1900 |
| 500+ | $0.7501 | $ 375.0500 |
| 1000+ | $0.7232 | $ 723.2000 |
