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miracle MGZ18N65


Manufacturer
Mfr. Part #
MGZ18N65
EBEE Part #
E817702019
Package
DFN8x8-3L
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
DFN8x8-3L GaN Transistors(GaN HEMT) ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.6663$ 0.6663
10+$0.5402$ 5.4020
30+$0.4780$ 14.3400
100+$0.4141$ 41.4100
500+$0.3768$ 188.4000
1000+$0.3581$ 358.1000
TypeDescription
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CategoryGallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT)
Datasheetmiracle MGZ18N65
RoHS
RDS(on)150mΩ
Operating Temperature --55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds)1pF
Pd - Power Dissipation52W
Drain to Source Voltage650V
Gate Threshold Voltage (Vgs(th))4V
Current - Continuous Drain(Id)13A
Ciss-Input Capacitance598pF
Output Capacitance(Coss)30pF
Gate Charge(Qg)8nC

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