| Fabricante | |
| Código de Pieza del Fabricante | C3M0075120K-A |
| Código de Pieza EBEE | E87429887 |
| Paquete | TO-247-4 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $10.4053 | $ 10.4053 |
| 10+ | $9.8807 | $ 98.8070 |
| 30+ | $8.9718 | $ 269.1540 |
| 90+ | $8.1786 | $ 736.0740 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Hoja de Datos | Wolfspeed C3M0075120K-A | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 75mΩ | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 32A | |
| Ciss-Input Capacitance | 1.39nF | |
| Output Capacitance(Coss) | 58pF | |
| Gate Charge(Qg) | 53nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $10.4053 | $ 10.4053 |
| 10+ | $9.8807 | $ 98.8070 |
| 30+ | $8.9718 | $ 269.1540 |
| 90+ | $8.1786 | $ 736.0740 |
