| Fabricante | |
| Código de Pieza del Fabricante | C3M0075120J |
| Código de Pieza EBEE | E85567652 |
| Paquete | TO-263-7 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | D2PAK-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $12.4599 | $ 12.4599 |
| 10+ | $10.7154 | $ 107.1540 |
| 50+ | $9.6521 | $ 482.6050 |
| 100+ | $8.7619 | $ 876.1900 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Hoja de Datos | Wolfspeed C3M0075120J | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 90mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF | |
| Pd - Power Dissipation | 113.6W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.39nF | |
| Output Capacitance(Coss) | 58pF | |
| Gate Charge(Qg) | 48nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $12.4599 | $ 12.4599 |
| 10+ | $10.7154 | $ 107.1540 |
| 50+ | $9.6521 | $ 482.6050 |
| 100+ | $8.7619 | $ 876.1900 |
