| Fabricante | |
| Código de Pieza del Fabricante | C3M0021120K |
| Código de Pieza EBEE | E85713521 |
| Paquete | TO-247-4 |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | EAR99 |
| Descripción | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $19.6115 | $ 19.6115 |
| 30+ | $18.6428 | $ 559.2840 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Hoja de Datos | Wolfspeed C3M0021120K | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 28.8mΩ | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Pd - Power Dissipation | 469W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 4.818nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 165nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $19.6115 | $ 19.6115 |
| 30+ | $18.6428 | $ 559.2840 |
