20% off
| Fabricante | |
| Código de Pieza del Fabricante | S1M040120H |
| Código de Pieza EBEE | E822363605 |
| Paquete | TO-247-4L |
| Número de Cliente | |
| Hoja de Datos | |
| Modelos EDA | |
| ECCN | None |
| Descripción | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.0002 | $ 3.0002 |
| 10+ | $2.5911 | $ 25.9110 |
| 30+ | $2.3155 | $ 69.4650 |
| 90+ | $2.0704 | $ 186.3360 |
| 510+ | $1.9574 | $ 998.2740 |
| 990+ | $1.9053 | $ 1886.2470 |
| Tipo | Descripción | Seleccionar Todo |
|---|---|---|
| Categoría | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Hoja de Datos | Sichainsemi S1M040120H | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 32mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| Pd - Power Dissipation | 357W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Current - Continuous Drain(Id) | 76A | |
| Ciss-Input Capacitance | 2.159nF | |
| Output Capacitance(Coss) | 127pF | |
| Gate Charge(Qg) | 76nC |
| Cant. | Precio Unitario | Precio Ext. |
|---|---|---|
| 1+ | $3.0002 | $ 3.0002 |
| 10+ | $2.5911 | $ 25.9110 |
| 30+ | $2.3155 | $ 69.4650 |
| 90+ | $2.0704 | $ 186.3360 |
| 510+ | $1.9574 | $ 998.2740 |
| 990+ | $1.9053 | $ 1886.2470 |
