| Hersteller | |
| Hersteller-Teilenummer | C3M0021120K |
| EBEE-Teilenummer | E85713521 |
| Gehäuse | TO-247-4 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $19.6115 | $ 19.6115 |
| 30+ | $18.6428 | $ 559.2840 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Datenblatt | Wolfspeed C3M0021120K | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 28.8mΩ | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF | |
| Pd - Power Dissipation | 469W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 4.818nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 165nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $19.6115 | $ 19.6115 |
| 30+ | $18.6428 | $ 559.2840 |
