| Hersteller | |
| Hersteller-Teilenummer | CID12N65D(TOKMAS) |
| EBEE-Teilenummer | E821547657 |
| Gehäuse | DFN-10(6x8) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | DFN-10(6x8) GaN Transistors(GaN HEMT) ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0717 | $ 1.0717 |
| 10+ | $0.8733 | $ 8.7330 |
| 30+ | $0.7733 | $ 23.1990 |
| 100+ | $0.6748 | $ 67.4800 |
| 500+ | $0.6161 | $ 308.0500 |
| 1000+ | $0.5843 | $ 584.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Gallium Nitride (GaN) Devices ,GaN Transistors(GaN HEMT) | |
| Datenblatt | Tokmas CID12N65D(TOKMAS) | |
| RoHS | ||
| RDS(on) | 138mΩ | |
| Operating Temperature - | -40℃~+125℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11.5A | |
| Output Capacitance(Coss) | 30pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0717 | $ 1.0717 |
| 10+ | $0.8733 | $ 8.7330 |
| 30+ | $0.7733 | $ 23.1990 |
| 100+ | $0.6748 | $ 67.4800 |
| 500+ | $0.6161 | $ 308.0500 |
| 1000+ | $0.5843 | $ 584.3000 |
