| Hersteller | |
| Hersteller-Teilenummer | IMW120R030M1H |
| EBEE-Teilenummer | E8536280 |
| Gehäuse | TO-247-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $15.4997 | $ 15.4997 |
| 10+ | $14.2672 | $ 142.6720 |
| 30+ | $13.2297 | $ 396.8910 |
| 90+ | $12.3255 | $ 1109.2950 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Geräte aus Siliziumkarbid (SiC) ,Siliziumkarbidfeldeffektransistor (MOSFET) | |
| Datenblatt | Infineon Technologies IMW120R030M1H | |
| RoHS | ||
| Temperatur | -55℃~+175℃ | |
| Ableitung der Stromableitung | 227W | |
| Total Gate Charge | 63nC | |
| Dauerstrom | 56A | |
| Reverse Transfer Capacitance | 13pF | |
| Eingangskapazitanz | 2120pF | |
| Konfiguration | - | |
| Kanaltyp | 1 N-Channel | |
| Drain-Source On-State Resistance(15V) | 42mΩ | |
| Drain-Source On-State Resistance(18V) | 30mΩ | |
| Drain-Source On-State Resistance(20V) | - | |
| Vg(th) | 4.5V | |
| Gekapselte Typ | Single Tube | |
| V(BR)DSS | 1200V | |
| Drain-Source On-State Resistance (10V) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $15.4997 | $ 15.4997 |
| 10+ | $14.2672 | $ 142.6720 |
| 30+ | $13.2297 | $ 396.8910 |
| 90+ | $12.3255 | $ 1109.2950 |
