| Hersteller | |
| Hersteller-Teilenummer | IMD2AT108 |
| EBEE-Teilenummer | E8509889 |
| Gehäuse | SOT-457 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 56@5mA,5V 300mW 100mA 50V SOT-457 Digital Transistors ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0841 | $ 0.4205 |
| 50+ | $0.0673 | $ 3.3650 |
| 150+ | $0.0589 | $ 8.8350 |
| 500+ | $0.0526 | $ 26.3000 |
| 3000+ | $0.0476 | $ 142.8000 |
| 6000+ | $0.0451 | $ 270.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,Bipolar (BJT) ,Bipolar Transistor Arrays, Pre-Biased | |
| Datenblatt | ROHM IMD2AT108 | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Typ | NPN+PNP | |
| Eingangswiderstand | 22kΩ | |
| Widerstand Ratio | 1 | |
| Eingangsspannung (VI(on) Ic,Vce) | 3V@5mA,200mV | |
| Collector - Emitter Voltage VCEO | 50V | |
| Current - Collector(Ic) | 100mA | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased | |
| Pd - Power Dissipation | 300mW | |
| DC Current Gain | 56 | |
| Transition frequency(fT) | 250MHz | |
| Output Voltage(VO(on)) | 100mV | |
| Voltage - Input(Max)(VI(off)) | 3V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0841 | $ 0.4205 |
| 50+ | $0.0673 | $ 3.3650 |
| 150+ | $0.0589 | $ 8.8350 |
| 500+ | $0.0526 | $ 26.3000 |
| 3000+ | $0.0476 | $ 142.8000 |
| 6000+ | $0.0451 | $ 270.6000 |
