| Üretici | |
| Üretici Parça No. | NTH4L070N120M3S |
| EBEE Parça No. | E819673850 |
| Paket | TO-247-4L |
| Müşteri No. | |
| Veri Sayfası | |
| EDA Modelleri | |
| ECCN | EAR99 |
| Açıklama | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $5.9475 | $ 5.9475 |
| 10+ | $5.3077 | $ 53.0770 |
| 30+ | $4.9282 | $ 147.8460 |
| 90+ | $4.5424 | $ 408.8160 |
| 450+ | $4.3662 | $ 1964.7900 |
| 900+ | $4.2852 | $ 3856.6800 |
| Tür | Açıklama | Tümünü Seç |
|---|---|---|
| Kategori | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Veri Sayfası | onsemi NTH4L070N120M3S | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS(on) | 65mΩ@18V | |
| Operating Temperature - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Pd - Power Dissipation | 80W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 2.9V | |
| Current - Continuous Drain(Id) | 34A | |
| Ciss-Input Capacitance | 1.23nF | |
| Output Capacitance(Coss) | 57pF | |
| Gate Charge(Qg) | 57nC |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $5.9475 | $ 5.9475 |
| 10+ | $5.3077 | $ 53.0770 |
| 30+ | $4.9282 | $ 147.8460 |
| 90+ | $4.5424 | $ 408.8160 |
| 450+ | $4.3662 | $ 1964.7900 |
| 900+ | $4.2852 | $ 3856.6800 |
