| Üretici | |
| Üretici Parça No. | CI90N120SM4 |
| EBEE Parça No. | E85364637 |
| Paket | TO-247-4 |
| Müşteri No. | |
| Veri Sayfası | |
| EDA Modelleri | |
| Açıklama | TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $7.7868 | $ 7.7868 |
| 10+ | $6.6709 | $ 66.7090 |
| 30+ | $5.9905 | $ 179.7150 |
| 90+ | $5.4190 | $ 487.7100 |
| Tür | Açıklama | Tümünü Seç |
|---|---|---|
| Kategori | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Veri Sayfası | Tokmas CI90N120SM4 | |
| RoHS | ||
| RDS(on) | 38mΩ | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 42.8pF | |
| Pd - Power Dissipation | 463W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 90A | |
| Ciss-Input Capacitance | 4.7nF | |
| Output Capacitance(Coss) | 231pF | |
| Gate Charge(Qg) | 185nC |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $7.7868 | $ 7.7868 |
| 10+ | $6.6709 | $ 66.7090 |
| 30+ | $5.9905 | $ 179.7150 |
| 90+ | $5.4190 | $ 487.7100 |
