| Üretici | |
| Üretici Parça No. | C3M0040120K |
| EBEE Parça No. | E85588747 |
| Paket | TO-247-4 |
| Müşteri No. | |
| Veri Sayfası | |
| EDA Modelleri | |
| ECCN | EAR99 |
| Açıklama | TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $9.7354 | $ 9.7354 |
| 10+ | $8.4587 | $ 84.5870 |
| 30+ | $7.6812 | $ 230.4360 |
| 90+ | $7.0302 | $ 632.7180 |
| Tür | Açıklama | Tümünü Seç |
|---|---|---|
| Kategori | Silicon Carbide (SiC) Devices ,Silicon Carbide Field Effect Transistor (MOSFET) | |
| Veri Sayfası | Wolfspeed C3M0040120K | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 53.5mΩ | |
| Operating Temperature - | -40℃~+175℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Pd - Power Dissipation | 326W | |
| Drain to Source Voltage | 1.2kV | |
| Gate Threshold Voltage (Vgs(th)) | 3.6V | |
| Current - Continuous Drain(Id) | 66A | |
| Ciss-Input Capacitance | 2.9nF | |
| Output Capacitance(Coss) | 103pF | |
| Gate Charge(Qg) | 99nC |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $9.7354 | $ 9.7354 |
| 10+ | $8.4587 | $ 84.5870 |
| 30+ | $7.6812 | $ 230.4360 |
| 90+ | $7.0302 | $ 632.7180 |
