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Wuxi NCE Power Semiconductor NCE30TD60BF


Manufacturer
Mfr. Part #
NCE30TD60BF
EBEE Part #
E8502942
Package
TO-220F-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
35.5W 60A 600V TO-220F-3 IGBT Transistors / Modules ROHS
This materials supports customized cables!
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203 In Stock for Fast Shipping
203 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.4822$ 1.4822
10+$1.2683$ 12.6830
50+$1.1524$ 57.6200
100+$1.0183$ 101.8300
500+$0.9604$ 480.2000
1000+$0.9332$ 933.2000
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TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetWuxi NCE Power Semiconductor NCE30TD60BF
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type-
Collector Current (Ic)60A
Power Dissipation (Pd)35.5W
Turn?off Delay Time (Td(off))166ns
Turn?on Delay Time (Td(on))19ns
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)3.552nF@25V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5V@1mA
Total Gate Charge (Qg@Ic,Vge)132nC@30A,15V
Diode Reverse Recovery Time (Trr)178ns
Turn?off Switching Loss (Eoff)0.32mJ
Turn?on Switching Loss (Eon)0.36mJ
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.7V@30A,15V
Diode Forward Voltage (Vf@If)1.7V@30A

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