| Manufacturer | |
| Mfr. Part # | CRG50T60AK3SD |
| EBEE Part # | E822363475 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | None |
| Description | TO-247 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6655 | $ 1.6655 |
| 10+ | $1.4115 | $ 14.1150 |
| 25+ | $1.3194 | $ 32.9850 |
| 100+ | $1.1575 | $ 115.7500 |
| 500+ | $1.0844 | $ 542.2000 |
| 1000+ | $1.0511 | $ 1051.1000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | CRMICRO CRG50T60AK3SD | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@1mA | |
| Pd - Power Dissipation | 416W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 303nC@15V | |
| Td(off) | 316ns | |
| Td(on) | 117ns | |
| Reverse Recovery Time(trr) | 54ns | |
| Switching Energy(Eoff) | 1.54mJ | |
| Turn-On Energy (Eon) | 3.18mJ | |
| Input Capacitance(Cies) | 7.719nF@30V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6655 | $ 1.6655 |
| 10+ | $1.4115 | $ 14.1150 |
| 25+ | $1.3194 | $ 32.9850 |
| 100+ | $1.1575 | $ 115.7500 |
| 500+ | $1.0844 | $ 542.2000 |
| 1000+ | $1.0511 | $ 1051.1000 |
