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MASPOWER ESJ100SH60N


Manufacturer
Mfr. Part #
ESJ100SH60N
EBEE Part #
E837635852
Package
FD7
Customer #
Datasheet
EDA Models
ECCN
-
Description
FD7 IGBT Transistors / Modules ROHS
This materials supports customized cables!
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Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$22.1222$ 22.1222
TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetMASPOWER ESJ100SH60N
RoHS
Operating Temperature-40℃~+125℃
Collector-Emitter Breakdown Voltage (Vces)600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.5V@250uA
IGBT TypeNPT (Non-Punch Through)
Gate Charge(Qg)560nC@15V
Td(off)250ns
Td(on)120ns
Reverse Transfer Capacitance (Cres)280pF
Reverse Recovery Time(trr)180ns
Switching Energy(Eoff)1.9mJ
Turn-On Energy (Eon)1mJ
Input Capacitance(Cies)5.85nF
Pulsed Current- Forward(Ifm)200A
Output Capacitance(Coes)780pF

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