| Manufacturer | |
| Mfr. Part # | ESJ100SH60N |
| EBEE Part # | E837635852 |
| Package | FD7 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | FD7 IGBT Transistors / Modules ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.1222 | $ 22.1222 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | MASPOWER ESJ100SH60N | |
| RoHS | ||
| Operating Temperature | -40℃~+125℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate Charge(Qg) | 560nC@15V | |
| Td(off) | 250ns | |
| Td(on) | 120ns | |
| Reverse Transfer Capacitance (Cres) | 280pF | |
| Reverse Recovery Time(trr) | 180ns | |
| Switching Energy(Eoff) | 1.9mJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 5.85nF | |
| Pulsed Current- Forward(Ifm) | 200A | |
| Output Capacitance(Coes) | 780pF |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $22.1222 | $ 22.1222 |
