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TOSHIBA GT60M324(Q)


Manufacturer
Mfr. Part #
GT60M324(Q)
EBEE Part #
E8396027
Package
TO-3P-3
Customer #
Datasheet
EDA Models
ECCN
-
Description
254W 60A 900V TO-3P-3 IGBT Transistors / Modules ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.0981$ 2.0981
10+$2.0572$ 20.5720
30+$2.0307$ 60.9210
100+$2.0040$ 200.4000
TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetTOSHIBA GT60M324(Q)
RoHS
Operating Temperature-
Type-
Collector Current (Ic)60A
Power Dissipation (Pd)254W
Turn?off Delay Time (Td(off))360ns
Turn?on Delay Time (Td(on))310ns
Collector-Emitter Breakdown Voltage (Vces)900V
Input Capacitance (Cies@Vce)3.6nF@10V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)7.5V@60mA
Total Gate Charge (Qg@Ic,Vge)-
Diode Reverse Recovery Time (Trr)800ns
Turn?off Switching Loss (Eoff)-
Turn?on Switching Loss (Eon)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)1.7V@60A,15V
Diode Forward Voltage (Vf@If)1.3V@15A

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