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TOSHIBA GT50JR22(S1WLD,E,S)


Manufacturer
Mfr. Part #
GT50JR22(S1WLD,E,S
EBEE Part #
E82880445
Package
TO-3P-3
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
TO-3P-3 IGBT Transistors / Modules ROHS
This materials supports customized cables!
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2007 In Stock for Fast Shipping
2007 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.6308$ 1.6308
10+$1.3625$ 13.6250
25+$1.0354$ 25.8850
100+$0.8702$ 87.0200
500+$0.7956$ 397.8000
1000+$0.7623$ 762.3000
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TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetTOSHIBA GT50JR22(S1WLD,E,S
RoHS
Collector-Emitter Breakdown Voltage (Vces)600V
Pd - Power Dissipation250W
Td(off)330ns
Td(on)250ns
Reverse Recovery Time(trr)350ns
Input Capacitance(Cies)2.7nF
Pulsed Current- Forward(Ifm)100A

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