| Manufacturer | |
| Mfr. Part # | GT50JR22(S1WLD,E,S |
| EBEE Part # | E82880445 |
| Package | TO-3P-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-3P-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6308 | $ 1.6308 |
| 10+ | $1.3625 | $ 13.6250 |
| 25+ | $1.0354 | $ 25.8850 |
| 100+ | $0.8702 | $ 87.0200 |
| 500+ | $0.7956 | $ 397.8000 |
| 1000+ | $0.7623 | $ 762.3000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | TOSHIBA GT50JR22(S1WLD,E,S | |
| RoHS | ||
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Pd - Power Dissipation | 250W | |
| Td(off) | 330ns | |
| Td(on) | 250ns | |
| Reverse Recovery Time(trr) | 350ns | |
| Input Capacitance(Cies) | 2.7nF | |
| Pulsed Current- Forward(Ifm) | 100A |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.6308 | $ 1.6308 |
| 10+ | $1.3625 | $ 13.6250 |
| 25+ | $1.0354 | $ 25.8850 |
| 100+ | $0.8702 | $ 87.0200 |
| 500+ | $0.7956 | $ 397.8000 |
| 1000+ | $0.7623 | $ 762.3000 |
