| Manufacturer | |
| Mfr. Part # | STGW80H65DFB-4 |
| EBEE Part # | E85268573 |
| Package | TO-247-4 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 469W 120A 650V FS(Field Stop) TO-247-4 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0045 | $ 3.0045 |
| 10+ | $2.9303 | $ 29.3030 |
| 30+ | $2.8823 | $ 86.4690 |
| 90+ | $2.8329 | $ 254.9610 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | STMicroelectronics STGW80H65DFB-4 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Pd - Power Dissipation | 469W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 414nC | |
| Td(off) | 336ns | |
| Td(on) | 75ns | |
| Reverse Transfer Capacitance (Cres) | 215pF | |
| Reverse Recovery Time(trr) | 112ns | |
| Switching Energy(Eoff) | 1.7mJ | |
| Turn-On Energy (Eon) | 1mJ | |
| Input Capacitance(Cies) | 10.524nF | |
| Pulsed Current- Forward(Ifm) | 300A | |
| Output Capacitance(Coes) | 385pF |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0045 | $ 3.0045 |
| 10+ | $2.9303 | $ 29.3030 |
| 30+ | $2.8823 | $ 86.4690 |
| 90+ | $2.8329 | $ 254.9610 |
