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STMicroelectronics STGB19NC60KDT4


Manufacturer
Mfr. Part #
STGB19NC60KDT4
EBEE Part #
E8314017
Package
D2PAK
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
125W 35A 600V D2PAK IGBT Transistors / Modules ROHS
This materials supports customized cables!
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1196 In Stock for Fast Shipping
1196 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.6669$ 0.6669
10+$0.5367$ 5.3670
30+$0.4716$ 14.1480
100+$0.4065$ 40.6500
500+$0.3684$ 184.2000
1000+$0.3478$ 347.8000
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TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetSTMicroelectronics STGB19NC60KDT4
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces)600V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.75V@15V,12A
Pd - Power Dissipation125W
IGBT Type-
Gate Charge(Qg)55nC
Td(off)105ns
Td(on)30ns
Reverse Transfer Capacitance (Cres)28pF
Reverse Recovery Time(trr)31ns
Switching Energy(Eoff)255uJ
Turn-On Energy (Eon)165uJ
Input Capacitance(Cies)1.17nF
Pulsed Current- Forward(Ifm)50A
Output Capacitance(Coes)127pF

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