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ROHM Semicon RGTVX6TS65DGC11
| Manufacturer | |
| Mfr. Part # | RGTVX6TS65DGC11 |
| EBEE Part # | E817694859 |
| Package | TO-247N |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 404W 144A 650V FS(Field Stop) TO-247N IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>5 In Stock for Fast Shipping
5 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.9383 | $ 7.9383 |
| 10+ | $7.7354 | $ 77.3540 |
| 30+ | $7.5976 | $ 227.9280 |
| 100+ | $7.4617 | $ 746.1700 |
Best price for more quantity?
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | ROHM Semicon RGTVX6TS65DGC11 | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Type | FS(Field Stop) | |
| Collector Current (Ic) | 144A | |
| Power Dissipation (Pd) | 404W | |
| Turn?off Delay Time (Td(off)) | 201ns | |
| Turn?on Delay Time (Td(on)) | 45ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.9V@15V,80A | |
| Total Gate Charge (Qg@Ic,Vge) | 171nC | |
| Diode Reverse Recovery Time (Trr) | 109ns | |
| Turn?off Switching Loss (Eoff) | 1.8mJ | |
| Turn?on Switching Loss (Eon) | 2.65mJ |
Shopping Guide
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5 Stock for Shipping Fast
5 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.9383 | $ 7.9383 |
| 10+ | $7.7354 | $ 77.3540 |
| 30+ | $7.5976 | $ 227.9280 |
| 100+ | $7.4617 | $ 746.1700 |
Best price for more quantity?
$
