| Manufacturer | |
| Mfr. Part # | RGT50TM65DGC9 |
| EBEE Part # | E817610145 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 47W 21A 650V FS(Field Stop) TO-220 IGBT Transistors / Modules ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8382 | $ 1.8382 |
| 200+ | $0.7338 | $ 146.7600 |
| 500+ | $0.7101 | $ 355.0500 |
| 1000+ | $0.6974 | $ 697.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | ROHM Semicon RGT50TM65DGC9 | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Type | FS(Field Stop) | |
| Collector Current (Ic) | 21A | |
| Power Dissipation (Pd) | 47W | |
| Turn?off Delay Time (Td(off)) | 88ns | |
| Turn?on Delay Time (Td(on)) | 27ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,25A | |
| Total Gate Charge (Qg@Ic,Vge) | 49nC | |
| Diode Reverse Recovery Time (Trr) | 58ns | |
| Turn?off Switching Loss (Eoff) | - | |
| Turn?on Switching Loss (Eon) | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8382 | $ 1.8382 |
| 200+ | $0.7338 | $ 146.7600 |
| 500+ | $0.7101 | $ 355.0500 |
| 1000+ | $0.6974 | $ 697.4000 |
