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ROHM Semicon RGT30NS65DGTL
| Manufacturer | |
| Mfr. Part # | RGT30NS65DGTL |
| EBEE Part # | E82688827 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 133W 30A 650V FS(Field Stop) TO-263 IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2789 | $ 4.2789 |
| 200+ | $1.6563 | $ 331.2600 |
| 500+ | $1.5993 | $ 799.6500 |
| 1000+ | $1.5689 | $ 1568.9000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | ROHM Semicon RGT30NS65DGTL | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Type | FS(Field Stop) | |
| Collector Current (Ic) | 30A | |
| Power Dissipation (Pd) | 133W | |
| Turn?off Delay Time (Td(off)) | 64ns | |
| Turn?on Delay Time (Td(on)) | 18ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,15A | |
| Total Gate Charge (Qg@Ic,Vge) | 32nC | |
| Diode Reverse Recovery Time (Trr) | 55ns | |
| Turn?on Switching Loss (Eon) | - |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.2789 | $ 4.2789 |
| 200+ | $1.6563 | $ 331.2600 |
| 500+ | $1.5993 | $ 799.6500 |
| 1000+ | $1.5689 | $ 1568.9000 |
