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ROHM Semicon RGS80TS65DHRC11
| Manufacturer | |
| Mfr. Part # | RGS80TS65DHRC11 |
| EBEE Part # | E87493801 |
| Package | TO-247N |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 272W 73A 650V FS(Field Stop) TO-247N IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2868 | $ 5.2868 |
| 10+ | $4.5626 | $ 45.6260 |
| 30+ | $4.1322 | $ 123.9660 |
| 90+ | $3.6962 | $ 332.6580 |
| 510+ | $3.4963 | $ 1783.1130 |
| 990+ | $3.4045 | $ 3370.4550 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | ROHM Semicon RGS80TS65DHRC11 | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Type | FS(Field Stop) | |
| Collector Current (Ic) | 73A | |
| Power Dissipation (Pd) | 272W | |
| Turn?off Delay Time (Td(off)) | 112ns | |
| Turn?on Delay Time (Td(on)) | 37ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,40A | |
| Total Gate Charge (Qg@Ic,Vge) | 48nC | |
| Diode Reverse Recovery Time (Trr) | 103ns | |
| Turn?off Switching Loss (Eoff) | 1.03mJ | |
| Turn?on Switching Loss (Eon) | 1.05mJ |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.2868 | $ 5.2868 |
| 10+ | $4.5626 | $ 45.6260 |
| 30+ | $4.1322 | $ 123.9660 |
| 90+ | $3.6962 | $ 332.6580 |
| 510+ | $3.4963 | $ 1783.1130 |
| 990+ | $3.4045 | $ 3370.4550 |
