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RENESAS RBN75H65T1FPQ-A0#CB0
| Manufacturer | |
| Mfr. Part # | RBN75H65T1FPQ-A0#CB0 |
| EBEE Part # | E83193702 |
| Package | TO-247A |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 312W 150A 650V TO-247A IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.8423 | $ 13.8423 |
| 200+ | $5.3570 | $ 1071.4000 |
| 500+ | $5.1689 | $ 2584.4500 |
| 1000+ | $5.0767 | $ 5076.7000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | RENESAS RBN75H65T1FPQ-A0#CB0 | |
| RoHS | ||
| Operating Temperature | - | |
| Type | - | |
| Collector Current (Ic) | 150A | |
| Power Dissipation (Pd) | 312W | |
| Turn?off Delay Time (Td(off)) | 113ns | |
| Turn?on Delay Time (Td(on)) | 29ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,75A | |
| Total Gate Charge (Qg@Ic,Vge) | 54nC | |
| Diode Reverse Recovery Time (Trr) | 72ns | |
| Turn?off Switching Loss (Eoff) | 1mJ | |
| Turn?on Switching Loss (Eon) | 1.6mJ |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $13.8423 | $ 13.8423 |
| 200+ | $5.3570 | $ 1071.4000 |
| 500+ | $5.1689 | $ 2584.4500 |
| 1000+ | $5.0767 | $ 5076.7000 |
